Half bridge gate driver

Half Bridge Gate Driver (Isolated High Non-Isolated Low) NCD The NCD is a high voltage gate driver with one non−isolated low side gate driver and one galvanically isolated high or low side gate driver. It can directly drive two IGBTs in a half bridge configuration. Isolated high side driver can be powered with an isolated power supply. Half-bridge and full-bridge configurations (such as the transformer-coupled, push-pull half-bridge gate drive circuit shown in Figure 2) are used for higher-power applications. For double-ended (DC-coupled) bridge configurations, the worst-case is the maximum duty cycle (theoretically ). Figure 2: Transformer-coupled push-pull half-bridge gate drive circuit. Infineon’s gate driver IC solutions are the expert’s choice. We offer half bridge gate drivers with two interlocked channels. Now including the new V half bridge silicon on insulator (SOI) gate driver ICs with high current ( A) and low current ( A) option. With excellent ruggedness and noise immunity, these gate drivers are perfect for motor drives, home appliance, SMPS, battery powered applications .

Half-bridge and full-bridge configurations (such as the transformer-coupled, push-pull half-bridge gate drive circuit shown in Figure 2) are used for higher-power applications. For double-ended (DC-coupled) bridge configurations, the worst-case is the maximum duty cycle (theoretically ). Figure 2: Transformer-coupled push-pull half-bridge gate drive circuit. TI half-bridge drivers for MOSFET and IGBTs offer fast switching frequencies, high negative voltage handling and wide operating temperatures. HomePower management. The FL, a monolithic half bridge gate-drive IC, can drive MOSFETs and IGBTs that operate up to + V. ON Semiconductor’s high-voltage process and common mode noise canceling technique provides stable operation of the high-side driver under high-dVS/dt noise circumstances. An advanced level-shift circuit allows high-side gate driver operation up to VS= V (typical) for VBS=15 V.

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